IXYS-IXXH80N65B4D1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	PT
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	180 A
Current - Collector Pulsed (Icm):	430 A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 80A
Power - Max:	625 W
Switching Energy:	3.36mJ (on), 1.83mJ (off)
Input Type:	Standard
Gate Charge:	120 nC
Td (on/off) @ 25°C:	26ns/112ns
Test Condition:	400V, 80A, 3Ohm, 15V
Reverse Recovery Time (trr):	100 ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247 (IXXH)

IXYS IXXH80N65B4D1