IXXH60N65B4
  • Share:

IXYS IXXH60N65B4

Manufacturer No:
IXXH60N65B4
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXXH60N65B4 Datasheet
ECAD Model:
-
Description:
IGBT 650V 116A 455W TO247AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:PT
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):116 A
Current - Collector Pulsed (Icm):250 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 60A
Power - Max:455 W
Switching Energy:3.13mJ (on), 1.15mJ (off)
Input Type:Standard
Gate Charge:95 nC
Td (on/off) @ 25°C:37ns/145ns
Test Condition:400V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247 (IXXH)
0 Remaining View Similar

In Stock

$7.62
34

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXXH60N65B4 IXXH80N65B4   IXXH60N65C4   IXXH30N65B4   IXXH40N65B4  
Manufacturer IXYS IXYS IXYS IXYS IXYS
Product Status Active Active Active Active Active
IGBT Type PT PT PT PT PT
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V 650 V 650 V 650 V
Current - Collector (Ic) (Max) 116 A 160 A 118 A 65 A 120 A
Current - Collector Pulsed (Icm) 250 A 430 A 240 A 146 A 240 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 60A 2V @ 15V, 80A 2.2V @ 15V, 60A 2V @ 15V, 30A 1.8V @ 15V, 40A
Power - Max 455 W 625 W 455 W 230 W 455 W
Switching Energy 3.13mJ (on), 1.15mJ (off) 3.77mJ (on), 1.2mJ (off) 3.2mJ (on), 830µJ (off) 1.55mJ (on), 480µJ (off) 1.4mJ (on), 560µJ (off)
Input Type Standard Standard Standard Standard Standard
Gate Charge 95 nC 120 nC 94 nC 52 nC 77 nC
Td (on/off) @ 25°C 37ns/145ns 38ns/120ns 37ns/133ns 32ns/170ns 28ns/144ns
Test Condition 400V, 60A, 5Ohm, 15V 400V, 80A, 3Ohm, 15V 400V, 60A, 5Ohm, 15V 400V, 30A, 15Ohm, 15V 400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr) - - - - -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package TO-247 (IXXH) TO-247 (IXXH) TO-247 (IXXH) TO-247 (IXXH) TO-247 (IXXH)

Related Product By Categories

IKFW90N60EH3XKSA1
IKFW90N60EH3XKSA1
Infineon Technologies
INDUSTRY 14
FGI3040G2_F085
FGI3040G2_F085
Fairchild Semiconductor
IGBT, 41A, 390V, N-CHANNEL
IKW30N65ET7XKSA1
IKW30N65ET7XKSA1
Infineon Technologies
IKW30N65ET7XKSA1
APT70GR120B2
APT70GR120B2
Microchip Technology
IGBT 1200V 160A 961W TO247
IXYX100N65B3D1
IXYX100N65B3D1
IXYS
IGBT 650V 188A 1150W PLUS247
IXYN150N60B3
IXYN150N60B3
IXYS
IGBT
IRG7PH35UDPBF
IRG7PH35UDPBF
Infineon Technologies
IRG7PH35 - DISCRETE IGBT WITH AN
SGF23N60UFDM1TU
SGF23N60UFDM1TU
onsemi
IGBT 600V 23A 75W TO3PF
IXGH25N100AU1
IXGH25N100AU1
IXYS
IGBT 1000V 50A 200W TO247AD
RJH60F7BDPQ-A0#T0
RJH60F7BDPQ-A0#T0
Renesas Electronics America Inc
IGBT 600V 90A 328.9W TO-247A
NGTG30N60FLWG
NGTG30N60FLWG
onsemi
IGBT 600V 60A 250W TO247
SIGC28T60EX1SA4
SIGC28T60EX1SA4
Infineon Technologies
IGBT CHIP

Related Product By Brand

DSA75-18B
DSA75-18B
IXYS
DIODE AVALANCHE 1.8KV 110A DO203
DSS16-01AS-TRL
DSS16-01AS-TRL
IXYS
DIODE SCHOTTKY 100V 16A TO263AB
IXFP36N60X3
IXFP36N60X3
IXYS
MOSFET ULTRA JCT 600V 36A TO220
IXTA28P065T
IXTA28P065T
IXYS
MOSFET P-CH 65V 28A TO263
IXFT40N85XHV
IXFT40N85XHV
IXYS
MOSFET N-CH 850V 40A TO268
IXTH10N100D
IXTH10N100D
IXYS
MOSFET N-CH 1000V 10A TO247
IXFK73N30Q
IXFK73N30Q
IXYS
MOSFET N-CH 300V 73A TO264AA
IXTP220N075T
IXTP220N075T
IXYS
MOSFET N-CH 75V 220A TO220AB
IXTU01N100D
IXTU01N100D
IXYS
MOSFET N-CH 1000V 100MA TO251
IXFL44N100P
IXFL44N100P
IXYS
MOSFET N-CH 1000V 22A ISOPLUS264
IXGR35N120BD1
IXGR35N120BD1
IXYS
IGBT 1200V 54A 250W ISOPLUS247
IXBT20N300
IXBT20N300
IXYS
IGBT 3000V 50A 250W TO268