IXYS-IXXH110N65C4 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	PT
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	234 A
Current - Collector Pulsed (Icm):	600 A
Vce(on) (Max) @ Vge, Ic:	2.35V @ 15V, 110A
Power - Max:	880 W
Switching Energy:	2.3mJ (on), 600µJ (off)
Input Type:	Standard
Gate Charge:	180 nC
Td (on/off) @ 25°C:	35ns/143ns
Test Condition:	400V, 55A, 2Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247 (IXXH)

IXYS IXXH110N65C4