IXYS-IXUN350N10 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	350A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	2.5mOhm @ 175A, 10V
Vgs(th) (Max) @ Id:	4V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:	640 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	27000 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	830W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Supplier Device Package:	SOT-227B
Package / Case:	SOT-227-4, miniBLOC

IXYS IXUN350N10