IXUC200N055
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IXYS IXUC200N055

Manufacturer No:
IXUC200N055
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXUC200N055 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 200A ISOPLUS220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:200 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS220™
Package / Case:ISOPLUS220™
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Similar Products

Part Number IXUC200N055 IXUC100N055  
Manufacturer IXYS IXYS
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 5.1mOhm @ 100A, 10V 7.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 2mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 100 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - -
FET Feature - -
Power Dissipation (Max) 300W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package ISOPLUS220™ ISOPLUS220™
Package / Case ISOPLUS220™ ISOPLUS220™

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