IXTZ550N055T2
  • Share:

IXYS IXTZ550N055T2

Manufacturer No:
IXTZ550N055T2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTZ550N055T2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 550A DE475
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:550A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:595 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):600W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DE475
Package / Case:6-SMD, Flat Leads
0 Remaining View Similar

In Stock

$40.34
26

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTZ550N055T2 IXTX550N055T2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 550A (Tc) 550A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1mOhm @ 100A, 10V 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 595 nC @ 10 V 595 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 40000 pF @ 25 V 40000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 600W (Tc) 1250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package DE475 PLUS247™-3
Package / Case 6-SMD, Flat Leads TO-247-3 Variant

Related Product By Categories

SI2310-TP
SI2310-TP
Micro Commercial Co
MOSFET N-CH 60V 3A SOT23
BUZ31 H3045A
BUZ31 H3045A
Infineon Technologies
MOSFET N-CH 200V 14.5A D2PAK
SI7852ADP-T1-E3
SI7852ADP-T1-E3
Vishay Siliconix
MOSFET N-CH 80V 30A PPAK SO-8
IRFS3006TRLPBF
IRFS3006TRLPBF
Infineon Technologies
MOSFET N-CH 60V 195A D2PAK
SQR40020ER_GE3
SQR40020ER_GE3
Vishay Siliconix
MOSFET N-CH 40V 100A TO252 REV
BSC100N03LSG
BSC100N03LSG
Infineon Technologies
N-CHANNEL POWER MOSFET
SPP15N60C3XKSA1
SPP15N60C3XKSA1
Infineon Technologies
MOSFET N-CH 650V 15A TO220-3
IPL65R099C7AUMA1
IPL65R099C7AUMA1
Infineon Technologies
MOSFET N-CH 650V 21A 4VSON
IXFT44N50Q3
IXFT44N50Q3
IXYS
MOSFET N-CH 500V 44A TO268
AOC2414
AOC2414
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 8V 4.5A 4ALPHADFN
RSH125N03TB1
RSH125N03TB1
Rohm Semiconductor
MOSFET N-CH 30V 12.5A 8SOP
RSS070N05TB1
RSS070N05TB1
Rohm Semiconductor
MOSFET N-CH 45V 7A 8SOP

Related Product By Brand

VUO110-14NO7
VUO110-14NO7
IXYS
BRIDGE RECT 3P 1.4KV 127A PWS-E1
MDNA50P2200TG
MDNA50P2200TG
IXYS
BIPOLAR MODULE - DIODE TO-240AA
MDD312-22N1
MDD312-22N1
IXYS
DIODE MODULE 2.2KV 310A Y1-CU
CLA110MB1200NA
CLA110MB1200NA
IXYS
MOD THYRISTOR DUAL 1200V SOT-227
MCC132-08IO1
MCC132-08IO1
IXYS
MOD THYRISTOR DUAL 800V Y4-M6
MCD225-18IO1
MCD225-18IO1
IXYS
MOD THYRISTOR/DIODE 1800V Y1-CU
IXTQ180N10T
IXTQ180N10T
IXYS
MOSFET N-CH 100V 180A TO3P
IXTH12N100L
IXTH12N100L
IXYS
MOSFET N-CH 1000V 12A TO247
IXTT69N30P
IXTT69N30P
IXYS
MOSFET N-CH 300V 69A TO268
IXGA12N120A2
IXGA12N120A2
IXYS
IGBT 1200V 24A 75W TO263
IXGQ28N120B
IXGQ28N120B
IXYS
IGBT 1200V 50A 250W TO3P
IXGX50N60B2D1
IXGX50N60B2D1
IXYS
IGBT 600V 75A 400W TO247