IXTY44N10T
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IXYS IXTY44N10T

Manufacturer No:
IXTY44N10T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTY44N10T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 44A TO252
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:44A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:30mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1262 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IXTY44N10T IXTU44N10T  
Manufacturer IXYS IXYS
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 44A (Tc) 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 30mOhm @ 22A, 10V -
Vgs(th) (Max) @ Id 4.5V @ 25µA 4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V -
Vgs (Max) ±30V -
Input Capacitance (Ciss) (Max) @ Vds 1262 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 130W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount Through Hole
Supplier Device Package TO-252AA TO-251AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-251-3 Short Leads, IPak, TO-251AA

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