IXTY2N100P
  • Share:

IXYS IXTY2N100P

Manufacturer No:
IXTY2N100P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTY2N100P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 2A TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:24.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:655 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):86W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$3.28
248

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTY2N100P IXTY1N100P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc) 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 15Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 24.3 nC @ 10 V 15.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 655 pF @ 25 V 331 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 86W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IRFR5305TRLPBF
IRFR5305TRLPBF
Infineon Technologies
MOSFET P-CH 55V 31A DPAK
AOI4286
AOI4286
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 100V 4A/14A TO251A
MMFT1N10ET3
MMFT1N10ET3
onsemi
SMALL SIGNAL N-CHANNEL MOSFET
HUFA76639P3
HUFA76639P3
Fairchild Semiconductor
MOSFET N-CH 100V 51A TO220-3
AONS66920
AONS66920
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 100V 17.5A/48A 8DFN
SQA405EJ-T1_GE3
SQA405EJ-T1_GE3
Vishay Siliconix
MOSFET P-CH 40V 10A PPAK SC70-6
SIHG22N50D-E3
SIHG22N50D-E3
Vishay Siliconix
MOSFET N-CH 500V 22A TO247AC
PH3120L,115-NXP
PH3120L,115-NXP
NXP USA Inc.
POWER FIELD-EFFECT TRANSISTOR, 1
PSMN3R0-30YL,115
PSMN3R0-30YL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
IRF7607TRPBF
IRF7607TRPBF
Infineon Technologies
MOSFET N-CH 20V 6.5A MICRO8
VS-FB190SA10
VS-FB190SA10
Vishay General Semiconductor - Diodes Division
MOSFET N-CH 100V 190A SOT227
AUIRF7484Q
AUIRF7484Q
Infineon Technologies
MOSFET N CH 40V 14A 8-SO

Related Product By Brand

DMA150E1600NA
DMA150E1600NA
IXYS
DIODE GP 1.6KV 150A SOT227B
MCD250-16IO1
MCD250-16IO1
IXYS
MOD THYRISTOR/DIODE 1600V Y2-DCB
VTO110-12IO7
VTO110-12IO7
IXYS
RECT BRIDGE 3PH 1200V PWS-E-2
IXTA6N100D2
IXTA6N100D2
IXYS
MOSFET N-CH 1000V 6A TO263
IXFA12N50P
IXFA12N50P
IXYS
MOSFET N-CH 500V 12A TO263
IXTP160N075T
IXTP160N075T
IXYS
MOSFET N-CH 75V 160A TO220AB
IXTV102N20T
IXTV102N20T
IXYS
MOSFET N-CH 200V 102A PLUS220
IXSN35N100U1
IXSN35N100U1
IXYS
IGBT MOD 1000V 38A 205W SOT227B
IXYB82N120C3H1
IXYB82N120C3H1
IXYS
IGBT 1200V 164A 1040W PLUS264
IXYP8N90C3
IXYP8N90C3
IXYS
IGBT 900V 20A 125W TO220
IXGT20N140C3H1
IXGT20N140C3H1
IXYS
IGBT 1400V 42A 250W TO268
IX2D11S7
IX2D11S7
IXYS
IC GATE DRVR HALF BRIDGE 14SOIC