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| Part Number | IXTY1R4N60P | IXTU1R4N60P |
|---|---|---|
| Manufacturer | IXYS | IXYS |
| Product Status | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) | 1.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 9Ohm @ 700mA, 10V | 9Ohm @ 700mA, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 25µA | 5.5V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 10 V | 5.2 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V | 140 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 50W (Tc) | 50W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Through Hole |
| Supplier Device Package | TO-252AA | TO-251AA |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-251-3 Short Leads, IPak, TO-251AA |
