IXTY1N80P
  • Share:

IXYS IXTY1N80P

Manufacturer No:
IXTY1N80P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTY1N80P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 1A TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$2.39
387

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTY1N80P IXTY2N80P   IXTY1N80  
Manufacturer IXYS IXYS IXYS
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc) 2A (Tc) 750mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 14Ohm @ 500mA, 10V 6Ohm @ 1A, 10V 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 50µA 5.5V @ 50µA 4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V 10.6 nC @ 10 V 8.5 nC @ 10 V
Vgs (Max) ±20V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 25 V 440 pF @ 25 V 220 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 42W (Tc) 70W (Tc) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

SIHB35N60E-GE3
SIHB35N60E-GE3
Vishay Siliconix
MOSFET N-CH 650V 32A D2PAK
FDD7030BL
FDD7030BL
Fairchild Semiconductor
MOSFET N-CH 30V 14A/56A DPAK
BUK661R9-40C,118
BUK661R9-40C,118
Nexperia USA Inc.
MOSFET N-CH 40V 120A D2PAK
STP45NF06
STP45NF06
STMicroelectronics
MOSFET N-CH 60V 38A TO220AB
BUK7M6R0-40HX
BUK7M6R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 50A LFPAK33
IXFX420N10T
IXFX420N10T
IXYS
MOSFET N-CH 100V 420A PLUS247-3
SSM6J207FE,LF
SSM6J207FE,LF
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 1.4A ES6
94-4796
94-4796
Infineon Technologies
MOSFET N-CH 55V 85A D2PAK
IRFR9024
IRFR9024
Vishay Siliconix
MOSFET P-CH 60V 8.8A DPAK
APT10M11B2VFRG
APT10M11B2VFRG
Microsemi Corporation
MOSFET N-CH 100V 100A T-MAX
AO4726
AO4726
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 20A 8SOIC
FCH041N65EFLN4
FCH041N65EFLN4
onsemi
MOSFET N-CH 650V 76A TO247-4

Related Product By Brand

MDD26-14N1B
MDD26-14N1B
IXYS
DIODE MODULE 1.4KV 36A TO240AA
MCNA75PD2200TB
MCNA75PD2200TB
IXYS
BIPOLAR MODULE - THYRISTOR TO-2
IXTA3N100D2HV
IXTA3N100D2HV
IXYS
MOSFET N-CH 1000V 3A TO263HV
IXTT16N10D2
IXTT16N10D2
IXYS
MOSFET N-CH 100V 16A TO268
IXKN40N60C
IXKN40N60C
IXYS
MOSFET N-CH 600V 40A SOT-227B
IXFK34N80
IXFK34N80
IXYS
MOSFET N-CH 800V 34A TO-264AA
IXFH76N07-12
IXFH76N07-12
IXYS
MOSFET N-CH 70V 76A TO247AD
IXFR30N110P
IXFR30N110P
IXYS
MOSFET N-CH 1100V 16A ISOPLUS247
IXA20I1200PZ-TRL
IXA20I1200PZ-TRL
IXYS
DISC IGBT XPT-GENX3 TO-263D2
IXGT10N170A
IXGT10N170A
IXYS
IGBT 1700V 10A 140W TO268
IXBH5N160G
IXBH5N160G
IXYS
IGBT 1600V 5.7A 68W TO247AD
IXDI502PI
IXDI502PI
IXYS
IC GATE DRVR LOW-SIDE 8DIP