IXTY1N80P
  • Share:

IXYS IXTY1N80P

Manufacturer No:
IXTY1N80P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTY1N80P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 1A TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$2.39
387

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTY1N80P IXTY2N80P   IXTY1N80  
Manufacturer IXYS IXYS IXYS
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc) 2A (Tc) 750mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 14Ohm @ 500mA, 10V 6Ohm @ 1A, 10V 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 50µA 5.5V @ 50µA 4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V 10.6 nC @ 10 V 8.5 nC @ 10 V
Vgs (Max) ±20V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 25 V 440 pF @ 25 V 220 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 42W (Tc) 70W (Tc) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

SIR871DP-T1-GE3
SIR871DP-T1-GE3
Vishay Siliconix
MOSFET P-CH 100V 48A PPAK SO-8
FDD86250
FDD86250
onsemi
MOSFET N-CH 150V 8A/50A DPAK
NTTFS2D1N04HLTWG
NTTFS2D1N04HLTWG
onsemi
MOSFET N-CH 40V 24A/150A 8PQFN
ZXMP2120G4TA
ZXMP2120G4TA
Diodes Incorporated
MOSFET P-CH 200V 200MA SOT223
IPD60R1K5CEATMA1
IPD60R1K5CEATMA1
Infineon Technologies
MOSFET N-CH 600V 3.1A TO252-3
IRL510L
IRL510L
Vishay Siliconix
MOSFET N-CH 100V 5.6A TO262-3
ZXM64P035L3
ZXM64P035L3
Diodes Incorporated
MOSFET P-CH 35V 3.3A/12A TO220-3
IRLR7833TRL
IRLR7833TRL
Infineon Technologies
MOSFET N-CH 30V 140A DPAK
NTR3162PT3G
NTR3162PT3G
onsemi
MOSFET P-CH 20V 2.2A SOT23-3
IPB100N04S2L03ATMA1
IPB100N04S2L03ATMA1
Infineon Technologies
MOSFET N-CH 40V 100A TO263-3
FDS4675-F085
FDS4675-F085
onsemi
MOSFET P-CH 40V 11A 8SOIC
IPD30N06S2L23ATMA1
IPD30N06S2L23ATMA1
Infineon Technologies
MOSFET N-CH 55V 30A TO252-3

Related Product By Brand

DPF60XA400NA
DPF60XA400NA
IXYS
DIODE GEN PURP 400V 60A SOT227B
MCD95-12IO1B
MCD95-12IO1B
IXYS
MOD THYRISTOR/DIO 1200V TO-240AA
IXTP44P15T
IXTP44P15T
IXYS
MOSFET P-CH 150V 44A TO220AB
IXFQ72N30X3
IXFQ72N30X3
IXYS
MOSFET N-CH 300V 72A TO3P
IXFN170N30P
IXFN170N30P
IXYS
MOSFET N-CH 300V 138A SOT-227B
IXTP42N25P
IXTP42N25P
IXYS
MOSFET N-CH 250V 42A TO220AB
IXTK170N10P
IXTK170N10P
IXYS
MOSFET N-CH 100V 170A TO264
IXFN180N10
IXFN180N10
IXYS
MOSFET N-CH 100V 180A SOT-227B
IXYR100N120C3
IXYR100N120C3
IXYS
IGBT 1200V 104A 484W ISOPLUS247
IXGC16N60B2
IXGC16N60B2
IXYS
IGBT 600V 28A 63W ISOPLUS220
IXGH48N60B3
IXGH48N60B3
IXYS
IGBT 600V 300W TO247AD
IXGX12N90C
IXGX12N90C
IXYS
IGBT 900V 24A 100W PLUS247