IXTY1N80
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IXYS IXTY1N80

Manufacturer No:
IXTY1N80
Manufacturer:
IXYS
Package:
Box
Datasheet:
IXTY1N80 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 750MA TO252AA
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:750mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:8.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:220 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IXTY1N80 IXTY1N80P   IXTY01N80  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 750mA (Tc) 1A (Tc) 100mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 11Ohm @ 500mA, 10V 14Ohm @ 500mA, 10V 50Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 25µA 4V @ 50µA 4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 10 V 9 nC @ 10 V 8 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 220 pF @ 25 V 250 pF @ 25 V 60 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 40W (Tc) 42W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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