IXTY08N120P
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IXYS IXTY08N120P

Manufacturer No:
IXTY08N120P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTY08N120P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1200V 8A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXTY08N120P IXTY02N120P   IXTY06N120P   IXTY08N100P  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1200 V 1000 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 200mA (Tc) 90A (Tc) 800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V - 10V
Rds On (Max) @ Id, Vgs - 75Ohm @ 500mA, 10V - 20Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id - 4V @ 100µA - 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs - 4.7 nC @ 10 V - 11.3 nC @ 10 V
Vgs (Max) - ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 104 pF @ 25 V - 240 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) - 33W (Tc) - 42W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-220-3 TO-252AA TO-252AA TO-252AA
Package / Case TO-220-3 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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