IXTY08N100P
  • Share:

IXYS IXTY08N100P

Manufacturer No:
IXTY08N100P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTY08N100P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 800MA TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:20Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:11.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:240 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$3.43
244

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTY08N100P IXTY08N120P   IXTU08N100P  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1200 V 1000 V
Current - Continuous Drain (Id) @ 25°C 800mA (Tc) 8A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - -
Rds On (Max) @ Id, Vgs 20Ohm @ 500mA, 10V - -
Vgs(th) (Max) @ Id 4V @ 50µA - -
Gate Charge (Qg) (Max) @ Vgs 11.3 nC @ 10 V - -
Vgs (Max) ±20V - -
Input Capacitance (Ciss) (Max) @ Vds 240 pF @ 25 V - -
FET Feature - - -
Power Dissipation (Max) 42W (Tc) - -
Operating Temperature -55°C ~ 150°C (TJ) - -
Mounting Type Surface Mount Through Hole Through Hole
Supplier Device Package TO-252AA TO-220-3 TO-251AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-3 TO-251-3 Short Leads, IPak, TO-251AA

Related Product By Categories

DMP2123LQ-7
DMP2123LQ-7
Diodes Incorporated
MOSFET P-CH 20V 3A SOT23
SSM3K15ACT(TPL3)
SSM3K15ACT(TPL3)
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 100MA CST3
SI4413ADY-T1-GE3
SI4413ADY-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 10.5A 8SO
SIHF35N60EF-GE3
SIHF35N60EF-GE3
Vishay Siliconix
MOSFET N-CH 600V 32A TO220
IXTA32P20T-TRL
IXTA32P20T-TRL
IXYS
MOSFET P-CH 200V 32A TO263
IXTX22N100L
IXTX22N100L
IXYS
MOSFET N-CH 1000V 22A PLUS247-3
IRF3707PBF
IRF3707PBF
Infineon Technologies
MOSFET N-CH 30V 62A TO220AB
MTP12P10G
MTP12P10G
onsemi
MOSFET P-CH 100V 12A TO220AB
HUFA75329P3
HUFA75329P3
onsemi
MOSFET N-CH 55V 49A TO220-3
STD7NM50N-1
STD7NM50N-1
STMicroelectronics
MOSFET N-CH 500V 5A IPAK
SSM3J16CT(TPL3)
SSM3J16CT(TPL3)
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 100MA CST3
NVMFS5A140PLZWFT3G
NVMFS5A140PLZWFT3G
onsemi
MOSFET P-CH 40V 20A/140A 5DFN

Related Product By Brand

VBO68-16NO7
VBO68-16NO7
IXYS
BRIDGE RECT 1P 1.6KV 68A ECOPAC1
DPG20C400PB
DPG20C400PB
IXYS
DIODE ARRAY GP 400V 10A TO220AB
IXTP10P50P
IXTP10P50P
IXYS
MOSFET P-CH 500V 10A TO220AB
IXFH20N100P
IXFH20N100P
IXYS
MOSFET N-CH 1000V 20A TO247AD
IXTP76N25T
IXTP76N25T
IXYS
MOSFET N-CH 250V 76A TO220AB
IXFQ50N60X
IXFQ50N60X
IXYS
MOSFET N-CH 600V 50A TO3P
IXFN100N50Q3
IXFN100N50Q3
IXYS
MOSFET N-CH 500V 82A SOT227B
IXDH20N120D1
IXDH20N120D1
IXYS
IGBT 1200V 38A 200W TO247AD
IXBH6N170
IXBH6N170
IXYS
IGBT 1700V 12A 75W TO247AD
IXGT50N60B
IXGT50N60B
IXYS
IGBT 600V 75A 300W TO268
IXGP12N100
IXGP12N100
IXYS
IGBT 1000V 24A 100W TO220AB
IXCP30M45A
IXCP30M45A
IXYS
IC CURRENT REGULATOR TO220AB