IXTY08N100P
  • Share:

IXYS IXTY08N100P

Manufacturer No:
IXTY08N100P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTY08N100P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 800MA TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:20Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:11.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:240 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$3.43
244

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTY08N100P IXTY08N120P   IXTU08N100P  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1200 V 1000 V
Current - Continuous Drain (Id) @ 25°C 800mA (Tc) 8A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - -
Rds On (Max) @ Id, Vgs 20Ohm @ 500mA, 10V - -
Vgs(th) (Max) @ Id 4V @ 50µA - -
Gate Charge (Qg) (Max) @ Vgs 11.3 nC @ 10 V - -
Vgs (Max) ±20V - -
Input Capacitance (Ciss) (Max) @ Vds 240 pF @ 25 V - -
FET Feature - - -
Power Dissipation (Max) 42W (Tc) - -
Operating Temperature -55°C ~ 150°C (TJ) - -
Mounting Type Surface Mount Through Hole Through Hole
Supplier Device Package TO-252AA TO-220-3 TO-251AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-3 TO-251-3 Short Leads, IPak, TO-251AA

Related Product By Categories

HUF75329D3
HUF75329D3
Fairchild Semiconductor
MOSFET N-CH 55V 20A IPAK
SIR140DP-T1-RE3
SIR140DP-T1-RE3
Vishay Siliconix
MOSFET N-CH 25V 71.9A/100A PPAK
SI3469DV-T1-BE3
SI3469DV-T1-BE3
Vishay Siliconix
P-CHANNEL 20-V (D-S) MOSFET
SI2333DS-T1-BE3
SI2333DS-T1-BE3
Vishay Siliconix
P-CHANNEL 12-V (D-S) MOSFET
AOT22N50L
AOT22N50L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 500V 22A TO220
IRL3103D1STRR
IRL3103D1STRR
Vishay Siliconix
MOSFET N-CH 30V 64A D2PAK
BUZ31L E3044A
BUZ31L E3044A
Infineon Technologies
MOSFET N-CH 200V 13.5A TO220-3
BSZ076N06NS3GATMA1
BSZ076N06NS3GATMA1
Infineon Technologies
MOSFET N-CH 60V 20A 8TSDSON
BXL4001
BXL4001
onsemi
MOSFET N-CH 75V 85A TO220
SUD35N05-26L-E3
SUD35N05-26L-E3
Vishay Siliconix
MOSFET N-CH 55V 35A TO252
IPZ60R125P6FKSA1
IPZ60R125P6FKSA1
Infineon Technologies
MOSFET N-CH 600V 37.9A TO247-4
AON6405L
AON6405L
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 15A/30A 8DFN

Related Product By Brand

DPG60C400QB
DPG60C400QB
IXYS
DIODE ARRAY GP 400V 30A TO3P
DMA80IM1600HB
DMA80IM1600HB
IXYS
PWR DIODE RECT 80A 1600V TO-247
MMO90-16IO6
MMO90-16IO6
IXYS
MODULE AC CTLR 1600V SOT-227B
MCMA110PD1600TB
MCMA110PD1600TB
IXYS
SCR MODULE 1.6KV 110A TO240AA
IXTH1N200P3HV
IXTH1N200P3HV
IXYS
MOSFET N-CH 2000V 1A TO247HV
IXFN52N100X
IXFN52N100X
IXYS
MOSFET N-CH 1000V 44A SOT227B
IXFQ50N60P3
IXFQ50N60P3
IXYS
MOSFET N-CH 600V 50A TO3P
IXFA3N80
IXFA3N80
IXYS
MOSFET N-CH 800V 3.6A TO263
IXFN180N10
IXFN180N10
IXYS
MOSFET N-CH 100V 180A SOT-227B
IXYH30N120C3
IXYH30N120C3
IXYS
IGBT 1200V 75A 500W TO247
IXST15N120BD1
IXST15N120BD1
IXYS
IGBT 1200V 30A 150W TO268
IXGR60N60U1
IXGR60N60U1
IXYS
IGBT 600V 75A 300W ISOPLUS247