IXTY06N120P
  • Share:

IXYS IXTY06N120P

Manufacturer No:
IXTY06N120P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTY06N120P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1200V 90A TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
316

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTY06N120P IXTY08N120P   IXTU06N120P   IXTY02N120P  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Obsolete Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 8A (Tc) 600mA (Tc) 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) - - - 10V
Rds On (Max) @ Id, Vgs - - - 75Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id - - - 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs - - - 4.7 nC @ 10 V
Vgs (Max) - - - ±20V
Input Capacitance (Ciss) (Max) @ Vds - - - 104 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) - - - 33W (Tc)
Operating Temperature - - - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole Through Hole Surface Mount
Supplier Device Package TO-252AA TO-220-3 TO-251AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-3 TO-251-3 Short Leads, IPak, TO-251AA TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

G3R350MT12D
G3R350MT12D
GeneSiC Semiconductor
SIC MOSFET N-CH 11A TO247-3
3SK324UG-TL-H
3SK324UG-TL-H
Renesas Electronics America Inc
DUAL N-CHANNEL MOSFET
FCP165N65S3
FCP165N65S3
onsemi
MOSFET N-CH 650V 19A TO220-3
STD4N62K3
STD4N62K3
STMicroelectronics
MOSFET N-CH 620V 3.8A DPAK
STF5N62K3
STF5N62K3
STMicroelectronics
MOSFET N-CH 620V 4.2A TO220FP
SQ3419EV-T1_BE3
SQ3419EV-T1_BE3
Vishay Siliconix
MOSFET P-CH 40V 6.9A 6TSOP
2SK3564(STA4,Q,M)
2SK3564(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 900V 3A TO220SIS
IPD025N06NATMA1
IPD025N06NATMA1
Infineon Technologies
MOSFET N-CH 60V 90A TO252-3
SPA20N60C3XKSA1
SPA20N60C3XKSA1
Infineon Technologies
MOSFET N-CH 600V 20.7A TO220-31
2N7002KA-TP
2N7002KA-TP
Micro Commercial Co
MOSFET N-CH 60V 340MA SOT23
APT84M50B2
APT84M50B2
Microchip Technology
MOSFET N-CH 500V 84A T-MAX
IXFK66N50Q2
IXFK66N50Q2
IXYS
MOSFET N-CH 500V 66A TO264AA

Related Product By Brand

VBO160-16NO7
VBO160-16NO7
IXYS
BRIDGE RECT 1P 1.6KV 174A PWS-E
MDA72-16N1B
MDA72-16N1B
IXYS
DIODE MODULE 1.6KV 113A TO240AA
DSS2X61-01A
DSS2X61-01A
IXYS
DIODE MODULE 100V 60A SOT227B
DSEE6-06CC
DSEE6-06CC
IXYS
DIODE ARRAY 600V 6A ISOPLUS220
DNA30E2200PZ-TUB
DNA30E2200PZ-TUB
IXYS
POWER DIODE DISCRETES-RECTIFIER
MCC72-14IO8B
MCC72-14IO8B
IXYS
MOD THYRISTOR DUAL 1400V TO240AA
MCNA150PD2200YB
MCNA150PD2200YB
IXYS
BIPOLAR MODULE - THYRISTOR Y4-M
IXFN170N65X2
IXFN170N65X2
IXYS
MOSFET N-CH 650V 170A SOT227B
IXFH18N60X
IXFH18N60X
IXYS
MOSFET N-CH 600V 18A TO247
IXFT80N15Q
IXFT80N15Q
IXYS
MOSFET N-CH 150V 80A TO268
IXGH120N30B3
IXGH120N30B3
IXYS
IGBT 300V 75A 540W TO247
IXGT30N60C2D1
IXGT30N60C2D1
IXYS
IGBT 600V 70A 190W TO268