IXTY06N120P
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IXYS IXTY06N120P

Manufacturer No:
IXTY06N120P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTY06N120P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1200V 90A TO252
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IXTY06N120P IXTY08N120P   IXTU06N120P   IXTY02N120P  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Obsolete Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 8A (Tc) 600mA (Tc) 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) - - - 10V
Rds On (Max) @ Id, Vgs - - - 75Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id - - - 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs - - - 4.7 nC @ 10 V
Vgs (Max) - - - ±20V
Input Capacitance (Ciss) (Max) @ Vds - - - 104 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) - - - 33W (Tc)
Operating Temperature - - - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole Through Hole Surface Mount
Supplier Device Package TO-252AA TO-220-3 TO-251AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-3 TO-251-3 Short Leads, IPak, TO-251AA TO-252-3, DPak (2 Leads + Tab), SC-63

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