IXTY02N120P
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IXYS IXTY02N120P

Manufacturer No:
IXTY02N120P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTY02N120P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1200V 200MA TO252
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:75Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:4.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:104 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):33W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IXTY02N120P IXTY06N120P   IXTY08N120P  
Manufacturer IXYS IXYS IXYS
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 200mA (Tc) 90A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - -
Rds On (Max) @ Id, Vgs 75Ohm @ 500mA, 10V - -
Vgs(th) (Max) @ Id 4V @ 100µA - -
Gate Charge (Qg) (Max) @ Vgs 4.7 nC @ 10 V - -
Vgs (Max) ±20V - -
Input Capacitance (Ciss) (Max) @ Vds 104 pF @ 25 V - -
FET Feature - - -
Power Dissipation (Max) 33W (Tc) - -
Operating Temperature -55°C ~ 150°C (TJ) - -
Mounting Type Surface Mount Surface Mount Through Hole
Supplier Device Package TO-252AA TO-252AA TO-220-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-3

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