IXTY01N80
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IXYS IXTY01N80

Manufacturer No:
IXTY01N80
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTY01N80 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 100MA TO252AA
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:100mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:50Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IXTY01N80 IXTY1N80   IXTU01N80  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 100mA (Tc) 750mA (Tc) 100mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 50Ohm @ 100mA, 10V 11Ohm @ 500mA, 10V 50Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 25µA 4.5V @ 25µA 4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V 8.5 nC @ 10 V 8 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V 220 pF @ 25 V 60 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 25W (Tc) 40W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Through Hole
Supplier Device Package TO-252AA TO-252AA TO-251AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-251-3 Short Leads, IPak, TO-251AA

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