IXTY01N100
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IXYS IXTY01N100

Manufacturer No:
IXTY01N100
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTY01N100 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 100MA TO252AA
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Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:100mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:80Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:6.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:54 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IXTY01N100 IXTY01N100D   IXTU01N100  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 100mA (Tc) 100mA (Tc) 100mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V
Rds On (Max) @ Id, Vgs 80Ohm @ 100mA, 10V 110Ohm @ 50mA, 0V 80Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 25µA - 4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 6.9 nC @ 10 V - 6.9 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 54 pF @ 25 V 120 pF @ 25 V 54 pF @ 25 V
FET Feature - Depletion Mode -
Power Dissipation (Max) 25W (Tc) 1.1W (Ta), 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Through Hole
Supplier Device Package TO-252AA TO-252AA TO-251AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-251-3 Short Leads, IPak, TO-251AA

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