IXTX550N055T2
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IXYS IXTX550N055T2

Manufacturer No:
IXTX550N055T2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTX550N055T2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 550A PLUS247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:550A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:595 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PLUS247™-3
Package / Case:TO-247-3 Variant
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Similar Products

Part Number IXTX550N055T2 IXTZ550N055T2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 550A (Tc) 550A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 100A, 10V 1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 595 nC @ 10 V 595 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 40000 pF @ 25 V 40000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1250W (Tc) 600W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package PLUS247™-3 DE475
Package / Case TO-247-3 Variant 6-SMD, Flat Leads

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