IXTV30N60P
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IXYS IXTV30N60P

Manufacturer No:
IXTV30N60P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTV30N60P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 30A PLUS220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:240mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:5050 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):540W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PLUS220
Package / Case:TO-220-3, Short Tab
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Similar Products

Part Number IXTV30N60P IXTT30N60P   IXTV30N50P  
Manufacturer IXYS IXYS IXYS
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 30A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 240mOhm @ 15A, 10V 240mOhm @ 15A, 10V 200mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V 82 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 5050 pF @ 25 V 5050 pF @ 25 V 4150 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 540W (Tc) 540W (Tc) 460W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole
Supplier Device Package PLUS220 TO-268AA PLUS220
Package / Case TO-220-3, Short Tab TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-220-3, Short Tab

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