IXTV230N085T
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IXYS IXTV230N085T

Manufacturer No:
IXTV230N085T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTV230N085T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 85V 230A PLUS220
Delivery:
Payment:
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iso45001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):85 V
Current - Continuous Drain (Id) @ 25°C:230A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:187 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):550W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PLUS220
Package / Case:TO-220-3, Short Tab
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Similar Products

Part Number IXTV230N085T IXTV230N085TS  
Manufacturer IXYS IXYS
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85 V 85 V
Current - Continuous Drain (Id) @ 25°C 230A (Tc) 230A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 50A, 10V 4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 187 nC @ 10 V 187 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9900 pF @ 25 V 9900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 550W (Tc) 550W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package PLUS220 PLUS-220SMD
Package / Case TO-220-3, Short Tab PLUS-220SMD

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