IXTV22N60P
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IXYS IXTV22N60P

Manufacturer No:
IXTV22N60P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTV22N60P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 22A PLUS220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:350mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:62 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):400W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PLUS220
Package / Case:TO-220-3, Short Tab
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Similar Products

Part Number IXTV22N60P IXTV26N60P   IXTV22N50P  
Manufacturer IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc) 26A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 11A, 10V 270mOhm @ 500mA, 10V 270mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA 5V @ 250µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V 72 nC @ 10 V 50 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 25 V 4150 pF @ 25 V 2630 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 400W (Tc) 460W (Tc) 350W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PLUS220 PLUS220 PLUS220
Package / Case TO-220-3, Short Tab TO-220-3, Short Tab TO-220-3, Short Tab

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