IXTU2N80P
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IXYS IXTU2N80P

Manufacturer No:
IXTU2N80P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTU2N80P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 2A TO251
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:5.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:10.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251AA
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number IXTU2N80P IXTY2N80P  
Manufacturer IXYS IXYS
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc) 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 1A, 10V 6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5.5V @ 50µA 5.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 10.6 nC @ 10 V 10.6 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 25 V 440 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 70W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-251AA TO-252AA
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-252-3, DPak (2 Leads + Tab), SC-63

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