IXTU08N100P
  • Share:

IXYS IXTU08N100P

Manufacturer No:
IXTU08N100P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTU08N100P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 8A TO251
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-251AA
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
0 Remaining View Similar

In Stock

-
534

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTU08N100P IXTY08N100P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs - 20Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id - 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs - 11.3 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 240 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 42W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-251AA TO-252AA
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

SSM3J377R,LXHF
SSM3J377R,LXHF
Toshiba Semiconductor and Storage
AECQ MOSFET PCH 20V 3.9A SOT23
2SK3116B(1)-ZK-E2-AY
2SK3116B(1)-ZK-E2-AY
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
SIHG47N60E-E3
SIHG47N60E-E3
Vishay Siliconix
MOSFET N-CH 600V 47A TO247AC
IXFX120N65X2
IXFX120N65X2
IXYS
MOSFET N-CH 650V 120A PLUS247-3
TPH4R803PL,LQ
TPH4R803PL,LQ
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 48A 8SOP
NVTYS005N06CLTWG
NVTYS005N06CLTWG
onsemi
T6 60V N-CH LL IN LFPAK33
FQI13N50CTU
FQI13N50CTU
onsemi
MOSFET N-CH 500V 13A I2PAK
AUIRLS3036-7TRL
AUIRLS3036-7TRL
Infineon Technologies
MOSFET N-CH 60V 240A D2PAK
SFT1341-TL-E
SFT1341-TL-E
onsemi
MOSFET P-CH 40V 10A DPAK/TP-FA
PMN35EN,115
PMN35EN,115
NXP USA Inc.
MOSFET N-CH 30V 5.1A 6TSOP
RD3G01BATTL1
RD3G01BATTL1
Rohm Semiconductor
PCH -40V -15A POWER MOSFET - RD3
RTR025N05TL
RTR025N05TL
Rohm Semiconductor
MOSFET N-CH 45V 2.5A TSMT3

Related Product By Brand

MEE95-06DA
MEE95-06DA
IXYS
DIODE MODULE 600V 95A TO240AA
MCD95-08IO8B
MCD95-08IO8B
IXYS
THYRISTOR DOUB 800V 116A TO-240
VVZ175-12IO7
VVZ175-12IO7
IXYS
RECT BRIDGE 3PH 167A 1200V PWSE2
N4240EA520
N4240EA520
IXYS
THYRISTOR PHASE 4240A 5200V DISC
IXTT90P10P
IXTT90P10P
IXYS
MOSFET P-CH 100V 90A TO268
IXFN52N100X
IXFN52N100X
IXYS
MOSFET N-CH 1000V 44A SOT227B
IXFX140N25T
IXFX140N25T
IXYS
MOSFET N-CH 250V 140A PLUS247-3
IXFE50N50
IXFE50N50
IXYS
MOSFET N-CH 500V 47A SOT227B
IXFK32N50Q
IXFK32N50Q
IXYS
MOSFET N-CH 500V 32A TO264AA
IXFR80N15Q
IXFR80N15Q
IXYS
MOSFET N-CH 150V 75A ISOPLUS247
IXTE250N10
IXTE250N10
IXYS
MOSFET N-CH 100V 250A SOT227B
IXGC12N60CD1
IXGC12N60CD1
IXYS
IGBT 600V 15A 85W ISOPLUS220