IXTU05N100
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IXYS IXTU05N100

Manufacturer No:
IXTU05N100
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTU05N100 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 750MA TO251
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Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:750mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:17Ohm @ 375mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.8 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:260 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251AA
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number IXTU05N100 IXTU05N120   IXTU01N100  
Manufacturer IXYS IXYS IXYS
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1200 V 1000 V
Current - Continuous Drain (Id) @ 25°C 750mA (Tc) 500mA (Tc) 100mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V
Rds On (Max) @ Id, Vgs 17Ohm @ 375mA, 10V - 80Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA - 4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 7.8 nC @ 10 V - 6.9 nC @ 10 V
Vgs (Max) ±30V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 260 pF @ 25 V - 54 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 40W (Tc) - 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-251AA TO-251AA TO-251AA
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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