IXTU02N50D
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IXYS IXTU02N50D

Manufacturer No:
IXTU02N50D
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTU02N50D Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 200MA TO251
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:30Ohm @ 50mA, 0V
Vgs(th) (Max) @ Id:5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:120 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):1.1W (Ta), 25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251AA
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number IXTU02N50D IXTY02N50D  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 200mA (Tc) 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 30Ohm @ 50mA, 0V 30Ohm @ 50mA, 0V
Vgs(th) (Max) @ Id 5V @ 25µA -
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 120 pF @ 25 V 120 pF @ 25 V
FET Feature Depletion Mode Depletion Mode
Power Dissipation (Max) 1.1W (Ta), 25W (Tc) 1.1W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-251AA TO-252AA
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-252-3, DPak (2 Leads + Tab), SC-63

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