IXTU01N100
  • Share:

IXYS IXTU01N100

Manufacturer No:
IXTU01N100
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTU01N100 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 100MA TO251
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:100mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:80Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:6.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:54 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251AA
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
0 Remaining View Similar

In Stock

$2.54
179

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTU01N100 IXTY01N100   IXTU01N100D   IXTU05N100  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 100mA (Tc) 100mA (Tc) 100mA (Tc) 750mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 0V 10V
Rds On (Max) @ Id, Vgs 80Ohm @ 100mA, 10V 80Ohm @ 100mA, 10V 80Ohm @ 50mA, 0V 17Ohm @ 375mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 25µA 4.5V @ 25µA 5V @ 25µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.9 nC @ 10 V 6.9 nC @ 10 V - 7.8 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 54 pF @ 25 V 54 pF @ 25 V 120 pF @ 25 V 260 pF @ 25 V
FET Feature - - Depletion Mode -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 1.1W (Ta), 25W (Tc) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole
Supplier Device Package TO-251AA TO-252AA TO-251AA TO-251AA
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-252-3, DPak (2 Leads + Tab), SC-63 TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

Related Product By Categories

AOT42S60L
AOT42S60L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 37A TO220
HUFA75307D3ST
HUFA75307D3ST
Fairchild Semiconductor
MOSFET N-CH 55V 15A TO252AA
IRFS3006TRLPBF
IRFS3006TRLPBF
Infineon Technologies
MOSFET N-CH 60V 195A D2PAK
SI8808DB-T2-E1
SI8808DB-T2-E1
Vishay Siliconix
MOSFET N-CH 30V 4MICROFOOT
IXTQ52N30P
IXTQ52N30P
IXYS
MOSFET N-CH 300V 52A TO3P
DMTH6004LPSQ-13
DMTH6004LPSQ-13
Diodes Incorporated
MOSFET N-CH 60V 100A PWRDI5060-8
DMT10H009SK3-13
DMT10H009SK3-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V TO252 T&R
STF21N90K5
STF21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO220FP
GT088N06T
GT088N06T
Goford Semiconductor
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
IRF7321D2TR
IRF7321D2TR
Infineon Technologies
MOSFET P-CH 30V 4.7A 8SO
IRF7707GTRPBF
IRF7707GTRPBF
Infineon Technologies
MOSFET P-CH 20V 7A 8TSSOP
AOD418G
AOD418G
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 13.5A/36A TO252

Related Product By Brand

MCC19-16IO8B
MCC19-16IO8B
IXYS
MOD THYRISTOR DUAL 1600V TO240AA
IXTQ74N20P
IXTQ74N20P
IXYS
MOSFET N-CH 200V 74A TO3P
IXTA80N10T-TRL
IXTA80N10T-TRL
IXYS
MOSFET N-CH 100V 80A TO263
IXFN20N120
IXFN20N120
IXYS
MOSFET N-CH 1200V 20A SOT-227B
IXFQ24N50Q
IXFQ24N50Q
IXYS
MOSFET N-CH 500V 24A TO3P
IXFR27N80Q
IXFR27N80Q
IXYS
MOSFET N-CH 800V 27A ISOPLUS247
IXFX44N55Q
IXFX44N55Q
IXYS
MOSFET N-CH 550V 44A PLUS247-3
IXYA20N120B4HV
IXYA20N120B4HV
IXYS
IGBT 1200V 20A GENX4 XPT TO263D2
IXGP30N120B3
IXGP30N120B3
IXYS
IGBT 1200V 60A 300W TO220
IXGH25N100AU1
IXGH25N100AU1
IXYS
IGBT 1000V 50A 200W TO247AD
IXGA36N60A3
IXGA36N60A3
IXYS
IGBT
IXCY02M35
IXCY02M35
IXYS
IC CURRENT REGULATOR DPAK