IXTT88N15
  • Share:

IXYS IXTT88N15

Manufacturer No:
IXTT88N15
Manufacturer:
IXYS
Package:
Box
Datasheet:
IXTT88N15 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 150V 88A TO268
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:88A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:22mOhm @ 44A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):400W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268AA
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
0 Remaining View Similar

In Stock

-
560

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTT88N15 IXTQ88N15  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 88A (Tc) 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 44A, 10V -
Vgs(th) (Max) @ Id 4V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 400W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Through Hole
Supplier Device Package TO-268AA TO-3P
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-3P-3, SC-65-3

Related Product By Categories

IRFI644GPBF
IRFI644GPBF
Vishay Siliconix
MOSFET N-CH 250V 7.9A TO220-3
IRL620A
IRL620A
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
IRF820STRRPBF
IRF820STRRPBF
Vishay Siliconix
MOSFET N-CH 500V 2.5A D2PAK
IPF13N03LA G
IPF13N03LA G
Infineon Technologies
MOSFET N-CH 25V 30A TO252-3
IPP600N25N3GXKSA1
IPP600N25N3GXKSA1
Infineon Technologies
MOSFET N-CH 250V 25A TO220-3
IPA65R400CEXKSA1
IPA65R400CEXKSA1
Infineon Technologies
MOSFET N-CH 650V TO220
SI3493BDV-T1-BE3
SI3493BDV-T1-BE3
Vishay Siliconix
P-CHANNEL 20-V (D-S) MOSFET
DMT8008SK3-13
DMT8008SK3-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V TO252 T&R
AOT11N70
AOT11N70
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 700V 11A TO220
IXFA102N15T
IXFA102N15T
IXYS
MOSFET N-CH 150V 102A TO263
IPB09N03LA G
IPB09N03LA G
Infineon Technologies
MOSFET N-CH 25V 50A TO263-3
NTD5807NT4G
NTD5807NT4G
onsemi
MOSFET N-CH 40V 23A DPAK

Related Product By Brand

FUE30-12N1
FUE30-12N1
IXYS
BRIDGE RECT 1P 1.2KV 30A I4-PAC
DSEC240-06A
DSEC240-06A
IXYS
DIODE MODULE 600V 120A SOT227B
DS9-08F
DS9-08F
IXYS
DIODE GEN PURP 800V 11A DO203AA
IXTQ16N50P
IXTQ16N50P
IXYS
MOSFET N-CH 500V 16A TO3P
IXTT110N10L2
IXTT110N10L2
IXYS
MOSFET N-CH 100V 110A TO268
IXFX26N100P
IXFX26N100P
IXYS
MOSFET N-CH 1000V 26A PLUS247-3
IXFN30N120P
IXFN30N120P
IXYS
MOSFET N-CH 1200V 30A SOT-227B
IXFT20N80Q
IXFT20N80Q
IXYS
MOSFET N-CH 800V 20A TO268
IXTQ220N055T
IXTQ220N055T
IXYS
MOSFET N-CH 55V 220A TO3P
IXTU01N100D
IXTU01N100D
IXYS
MOSFET N-CH 1000V 100MA TO251
IXYH100N65C3
IXYH100N65C3
IXYS
IGBT 650V 200A 830W TO247
IXYF30N450
IXYF30N450
IXYS
IGBT 4500V 23A 230W ISOPLUS