IXTT48P20P
  • Share:

IXYS IXTT48P20P

Manufacturer No:
IXTT48P20P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTT48P20P Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 200V 48A TO268
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:48A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:85mOhm @ 24A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:103 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):462W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268AA
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
0 Remaining View Similar

In Stock

$12.81
49

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTT48P20P IXTR48P20P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 48A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 24A, 10V 93mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 103 nC @ 10 V 103 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5400 pF @ 25 V 5400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 462W (Tc) 190W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package TO-268AA ISOPLUS247™
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3

Related Product By Categories

RF1S70N03
RF1S70N03
Harris Corporation
MOSFET N-CH 30V 70A TO262AA
IPD70N10S3L12ATMA1
IPD70N10S3L12ATMA1
Infineon Technologies
MOSFET N-CH 100V 70A TO252-3
PJP4NA65_T0_00001
PJP4NA65_T0_00001
Panjit International Inc.
650V N-CHANNEL MOSFET
STU3N45K3
STU3N45K3
STMicroelectronics
MOSFET N-CH 450V 1.8A IPAK
G75P04K
G75P04K
Goford Semiconductor
P40V,RD(MAX)<10M@-10V,VTH-1.2V~-
IXTA5N60P
IXTA5N60P
IXYS
MOSFET N-CH 600V 5A TO263
AO4304
AO4304
Alpha & Omega Semiconductor Inc.
MOSFET N CH 30V 18A 8SOIC
TPN2R503NC,L1Q
TPN2R503NC,L1Q
Toshiba Semiconductor and Storage
MOSFET N CH 30V 40A 8TSON-ADV
IRF8308MTR1PBF
IRF8308MTR1PBF
Infineon Technologies
MOSFET N-CH 30V 27A DIRECTFET
IPI084N06L3GXKSA1
IPI084N06L3GXKSA1
Infineon Technologies
MOSFET N-CH 60V 50A TO262-3
R6507ENXC7G
R6507ENXC7G
Rohm Semiconductor
650V 7A TO-220FM, LOW-NOISE POWE
RD3G03BATTL1
RD3G03BATTL1
Rohm Semiconductor
PCH -40V -35A POWER MOSFET - RD3

Related Product By Brand

DSSK48-003B
DSSK48-003B
IXYS
DIODE ARRAY SCHOTTKY 30V TO220AB
DSS60-0045B
DSS60-0045B
IXYS
DIODE SCHOTTKY 45V 60A TO247AD
DSI45-16A
DSI45-16A
IXYS
DIODE GEN PURP 1.6KV 45A TO247AD
DLA20IM800PC-TUB
DLA20IM800PC-TUB
IXYS
DIODE GEN PURP 800V 20A TO263
IXFX300N20X3
IXFX300N20X3
IXYS
MOSFET N-CH 200V 300A PLUS247-3
IXTP110N055T2
IXTP110N055T2
IXYS
MOSFET N-CH 55V 110A TO220AB
IXFR200N10P
IXFR200N10P
IXYS
MOSFET N-CH 100V 133A ISOPLUS247
IXTA300N04T2
IXTA300N04T2
IXYS
MOSFET N-CH 40V 300A TO263
IXTA86N20T
IXTA86N20T
IXYS
MOSFET N-CH 200V 86A TO263
IXTQ30N50L2
IXTQ30N50L2
IXYS
MOSFET N-CH 500V 30A TO3P
IXFK64N50Q3
IXFK64N50Q3
IXYS
MOSFET N-CH 500V 64A TO264AA
IXSH24N60BD1
IXSH24N60BD1
IXYS
IGBT 600V 48A 150W TO247