IXYS-IXTT3N200P3HV - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	2000 V
Current - Continuous Drain (Id) @ 25°C:	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	70 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1860 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	520W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-268HV (IXTT)
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

IXYS IXTT3N200P3HV