IXTT2N300P3HV
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IXYS IXTT2N300P3HV

Manufacturer No:
IXTT2N300P3HV
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTT2N300P3HV Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 3000V 2A TO268
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):3000 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:21Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:73 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1890 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):520W (Tc)
Operating Temperature:-55°C ~ 155°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268HV (IXTT)
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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$50.09
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Similar Products

Part Number IXTT2N300P3HV IXTT1N300P3HV  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 3000 V 3000 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc) 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 21Ohm @ 1A, 10V 50Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 10 V 30.6 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1890 pF @ 25 V 895 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 520W (Tc) 195W (Tc)
Operating Temperature -55°C ~ 155°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-268HV (IXTT) TO-268HV (IXTT)
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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