IXYS-IXTT20N50D - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	500 V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	330mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 250mA
Gate Charge (Qg) (Max) @ Vgs:	125 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	2500 pF @ 25 V
FET Feature:	Depletion Mode
Power Dissipation (Max):	400W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-268AA
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

IXYS IXTT20N50D