IXTT1N300P3HV
  • Share:

IXYS IXTT1N300P3HV

Manufacturer No:
IXTT1N300P3HV
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTT1N300P3HV Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 3000V 1A TO268
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):3000 V
Current - Continuous Drain (Id) @ 25°C:1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:50Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:895 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):195W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268HV (IXTT)
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
0 Remaining View Similar

In Stock

$39.11
16

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTT1N300P3HV IXTT2N300P3HV  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 3000 V 3000 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc) 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 50Ohm @ 500mA, 10V 21Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30.6 nC @ 10 V 73 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 895 pF @ 25 V 1890 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 195W (Tc) 520W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 155°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-268HV (IXTT) TO-268HV (IXTT)
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Related Product By Categories

DMG4466SSS-13
DMG4466SSS-13
Diodes Incorporated
MOSFET N-CH 30V 10A 8SOP
BUK9Y14-40B,115
BUK9Y14-40B,115
Nexperia USA Inc.
MOSFET N-CH 40V 56A LFPAK56
BSO130P03SHXUMA1
BSO130P03SHXUMA1
Infineon Technologies
MOSFET P-CH 30V 9.2A 8DSO
NVD5C434NT4G
NVD5C434NT4G
onsemi
MOSFET N-CHANNEL 40V 163A DPAK
PJA3419_R1_00001
PJA3419_R1_00001
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
PJQ5440-AU_R2_000A1
PJQ5440-AU_R2_000A1
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M
DMTH10H005SCT
DMTH10H005SCT
Diodes Incorporated
MOSFET N-CH 100V 140A TO220AB
IXFT44N50Q3
IXFT44N50Q3
IXYS
MOSFET N-CH 500V 44A TO268
IRF1405ZTRL
IRF1405ZTRL
Vishay Siliconix
MOSFET N-CH 55V 75A TO220AB
IRF3711ZSTRL
IRF3711ZSTRL
Infineon Technologies
MOSFET N-CH 20V 92A D2PAK
IRFR13N20DPBF
IRFR13N20DPBF
Infineon Technologies
MOSFET N-CH 200V 13A DPAK
AUIRLS4030-7TRL
AUIRLS4030-7TRL
Infineon Technologies
MOSFET N-CH 100V 190A D2PAK

Related Product By Brand

FUO22-16N
FUO22-16N
IXYS
BRIDGE RECT 3P 1.6KV 28A I4-PAC
GUO40-16NO1
GUO40-16NO1
IXYS
BRIDGE RECT 3P 1.6KV 40A GUFP
MCC95-16IO1B
MCC95-16IO1B
IXYS
THYRISTOR MODULE 1600V 2X116A
IXTA6N50D2-TRL
IXTA6N50D2-TRL
IXYS
MOSFET N-CH 500V 6A TO263
IXTP60N20X4
IXTP60N20X4
IXYS
MOSFET ULTRA X4 200V 60A TO-220
IXFH94N30T
IXFH94N30T
IXYS
MOSFET N-CH 300V 94A TO247AD
IXFH67N10
IXFH67N10
IXYS
MOSFET N-CH 100V 67A TO-247AD
IXTV200N10TS
IXTV200N10TS
IXYS
MOSFET N-CH 100V 200A PLUS220SMD
IXBT42N300HV
IXBT42N300HV
IXYS
IGBT 3000V 42A 357W TO268
IXXR110N65B4H1
IXXR110N65B4H1
IXYS
IGBT 650V 150A 455W ISOPLUS247
IXGH32N60BU1
IXGH32N60BU1
IXYS
IGBT 600V 60A 200W TO247AD
IXGH17N100
IXGH17N100
IXYS
IGBT 1000V 34A 150W TO247AD