IXTT1N250HV
  • Share:

IXYS IXTT1N250HV

Manufacturer No:
IXTT1N250HV
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTT1N250HV Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 2500V 1.5A TO268
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):2500 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:40Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1660 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268AA
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
0 Remaining View Similar

In Stock

$46.35
18

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTT1N250HV IXTT1N450HV  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 2500 V 4500 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Tc) 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 40Ohm @ 750mA, 10V 85Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 6.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1660 pF @ 25 V 1730 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 250W (Tc) 520W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-268AA TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Related Product By Categories

DMG4812SSS-13
DMG4812SSS-13
Diodes Incorporated
MOSFET N-CH 30V 8A 8SO
FDMC2D8N025S
FDMC2D8N025S
onsemi
MOSFET N-CH 25V 124A POWER33
ZXMP10A17GQTA
ZXMP10A17GQTA
Diodes Incorporated
MOSFET P-CH 100V 2.4A SOT223
NVTFS5124PLTAG
NVTFS5124PLTAG
onsemi
MOSFET P-CH 60V 2.4A 8WDFN
SI3458BDV-T1-E3
SI3458BDV-T1-E3
Vishay Siliconix
MOSFET N-CH 60V 4.1A 6TSOP
SISS72DN-T1-GE3
SISS72DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 150V 7A/25.5A PPAK
IPT029N08N5ATMA1
IPT029N08N5ATMA1
Infineon Technologies
MOSFET N-CH 80V 52A/169A HSOF-8
SMMBFJ310LT3
SMMBFJ310LT3
onsemi
RF N-CHANNEL, JUNCTION FET
PJW5N06A_R2_00001
PJW5N06A_R2_00001
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
IPB80N04S3-04
IPB80N04S3-04
Infineon Technologies
MOSFET N-CH 40V 80A TO263-3
FQD9N08TM
FQD9N08TM
onsemi
MOSFET N-CH 80V 7.4A DPAK
IPP12CN10NGXKSA1
IPP12CN10NGXKSA1
Infineon Technologies
MOSFET N-CH 100V 67A TO220-3

Related Product By Brand

IXFX320N17T2
IXFX320N17T2
IXYS
MOSFET N-CH 170V 320A PLUS247-3
IXFA110N15T2
IXFA110N15T2
IXYS
MOSFET N-CH 150V 110A TO263
IXTA94N20X4
IXTA94N20X4
IXYS
MOSFET 200V 94A N-CH ULTRA TO263
IXFK80N60P3
IXFK80N60P3
IXYS
MOSFET N-CH 600V 80A TO264AA
IXTK120N20P
IXTK120N20P
IXYS
MOSFET N-CH 200V 120A TO264
IXFR50N50
IXFR50N50
IXYS
MOSFET N-CH 500V 43A ISOPLUS247
IXTH250N075T
IXTH250N075T
IXYS
MOSFET N-CH 75V 250A TO247
IXTP7N60PM
IXTP7N60PM
IXYS
MOSFET N-CH 600V 4A TO220AB
IXYK110N120A4
IXYK110N120A4
IXYS
IGBT 1200V 110A GENX4 XPT TO-264
IXGY2N120
IXGY2N120
IXYS
IGBT 1200V 5A 25W TO252AA
IXGP20N100
IXGP20N100
IXYS
IGBT 1000V 40A 150W TO220
IXBD4411PI
IXBD4411PI
IXYS
IC GATE DRVR HIGH-SIDE 16DIP