IXTT1N250HV
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IXYS IXTT1N250HV

Manufacturer No:
IXTT1N250HV
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTT1N250HV Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 2500V 1.5A TO268
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):2500 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:40Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1660 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268AA
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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$46.35
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Similar Products

Part Number IXTT1N250HV IXTT1N450HV  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 2500 V 4500 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Tc) 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 40Ohm @ 750mA, 10V 85Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 6.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1660 pF @ 25 V 1730 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 250W (Tc) 520W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-268AA TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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