IXTT16P60P
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IXYS IXTT16P60P

Manufacturer No:
IXTT16P60P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTT16P60P Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 600V 16A TO268
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:720mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:92 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5120 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):460W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268AA
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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Similar Products

Part Number IXTT16P60P IXTR16P60P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 720mOhm @ 500mA, 10V 790mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V 92 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5120 pF @ 25 V 5120 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 460W (Tc) 190W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package TO-268AA ISOPLUS247™
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3

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