IXTT16N10D2
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IXYS IXTT16N10D2

Manufacturer No:
IXTT16N10D2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTT16N10D2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 16A TO268
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):0V
Rds On (Max) @ Id, Vgs:64mOhm @ 8A, 0V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:225 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5700 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):830W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268AA
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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$13.97
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Similar Products

Part Number IXTT16N10D2 IXTT16N50D2   IXTT16N20D2  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 500 V 200 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) 16A (Tc) 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 0V 0V -
Rds On (Max) @ Id, Vgs 64mOhm @ 8A, 0V 240mOhm @ 8A, 0V 73mOhm @ 8A, 0V
Vgs(th) (Max) @ Id - - -
Gate Charge (Qg) (Max) @ Vgs 225 nC @ 5 V 199 nC @ 5 V 208 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5700 pF @ 25 V 5250 pF @ 25 V 5500 pF @ 25 V
FET Feature Depletion Mode Depletion Mode Depletion Mode
Power Dissipation (Max) 830W (Tc) 695W (Tc) 695W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-268AA TO-268AA TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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