IXTT10P60
  • Share:

IXYS IXTT10P60

Manufacturer No:
IXTT10P60
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTT10P60 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 600V 10A TO268
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:160 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268AA
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
0 Remaining View Similar

In Stock

$12.34
19

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTT10P60 IXTT10P50  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V 900mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V 160 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 25 V 4700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-268AA TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Related Product By Categories

STU6N65M2
STU6N65M2
STMicroelectronics
MOSFET N-CH 650V 4A IPAK
CSD17506Q5A
CSD17506Q5A
Texas Instruments
MOSFET N-CH 30V 100A 8VSON
IPL60R285P7AUMA1
IPL60R285P7AUMA1
Infineon Technologies
MOSFET N-CH 600V 13A 4VSON
SIHP30N60E-GE3
SIHP30N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 29A TO220AB
PJQ4463AP_R2_00001
PJQ4463AP_R2_00001
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
SIHG17N80AEF-GE3
SIHG17N80AEF-GE3
Vishay Siliconix
E SERIES POWER MOSFET WITH FAST
BSB104N08NP3GXUSA1
BSB104N08NP3GXUSA1
Infineon Technologies
MOSFET N-CH 80V 13A/50A 2WDSON
NVMFS5A140PLZWFT1G
NVMFS5A140PLZWFT1G
onsemi
MOSFET P-CH 40V 20A/140A 5DFN
MTD3055V
MTD3055V
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
HUF76419P3
HUF76419P3
onsemi
MOSFET N-CH 60V 29A TO220-3
IRFR024NTRRPBF
IRFR024NTRRPBF
Infineon Technologies
MOSFET N-CH 55V 17A DPAK
NTB5411NT4G
NTB5411NT4G
onsemi
MOSFET N-CH 60V 80A D2PAK

Related Product By Brand

DPG60C400QB
DPG60C400QB
IXYS
DIODE ARRAY GP 400V 30A TO3P
MCMA25PD1600TB
MCMA25PD1600TB
IXYS
SCR MODULE 1.6KV 25A TO240AA
IXFH46N65X2
IXFH46N65X2
IXYS
MOSFET N-CH 650V 46A TO247
IXTT90P10P
IXTT90P10P
IXYS
MOSFET P-CH 100V 90A TO268
IXTQ64N25P
IXTQ64N25P
IXYS
MOSFET N-CH 250V 64A TO3P
IXTH16P20
IXTH16P20
IXYS
MOSFET P-CH 200V 16A TO247
IXTP240N055T
IXTP240N055T
IXYS
MOSFET N-CH 55V 240A TO220AB
IXFH8N80
IXFH8N80
IXYS
MOSFET N-CH 800V 8A TO247AD
IXBH2N250
IXBH2N250
IXYS
IGBT 2500V 5A 32W TO247
IXSH35N120B
IXSH35N120B
IXYS
IGBT 1200V 70A 300W TO247
IXGT20N140C3H1
IXGT20N140C3H1
IXYS
IGBT 1400V 42A 250W TO268
IXGX64N60B3D1
IXGX64N60B3D1
IXYS
IGBT 600V 460W PLUS247