IXTT10N100D
  • Share:

IXYS IXTT10N100D

Manufacturer No:
IXTT10N100D
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTT10N100D Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 10A TO268
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 10A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):400W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268AA
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
0 Remaining View Similar

In Stock

$17.40
52

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTT10N100D IXTT10N100D2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 10A, 10V 1.5Ohm @ 5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V 200 nC @ 5 V
Vgs (Max) ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V 5320 pF @ 25 V
FET Feature Depletion Mode Depletion Mode
Power Dissipation (Max) 400W (Tc) 695W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-268AA TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Related Product By Categories

DMN3731U-7
DMN3731U-7
Diodes Incorporated
MOSFET N-CH 30V 900MA SOT23
NTE2396A
NTE2396A
NTE Electronics, Inc
MOSFET N-CHANNEL 100V 33A TO220
2SK2511-A
2SK2511-A
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
TSM070NH04LCR RLG
TSM070NH04LCR RLG
Taiwan Semiconductor Corporation
40V, 54A, SINGLE N-CHANNEL POWER
PJE138K-AU_R1_000A1
PJE138K-AU_R1_000A1
Panjit International Inc.
SOT-523, MOSFET
BUK6Y10-30PX
BUK6Y10-30PX
Nexperia USA Inc.
MOSFET P-CH 30V 80A LFPAK56
NTA4015NT1G
NTA4015NT1G
onsemi
MOSFET N-CH 20V 238MA SC75
RM50N150DF
RM50N150DF
Rectron USA
MOSFET N-CHANNEL 150V 50A 8DFN
HAF1002-90STL
HAF1002-90STL
Renesas Electronics America Inc
MOSFET P-CH 60V 15A 4LDPAK
IRFZ48RPBF
IRFZ48RPBF
Vishay Siliconix
MOSFET N-CH 60V 50A TO220AB
IRF7458PBF
IRF7458PBF
Infineon Technologies
MOSFET N-CH 30V 14A 8SO
SCT4026DW7HRTL
SCT4026DW7HRTL
Rohm Semiconductor
750V, 51A, 7-PIN SMD, TRENCH-STR

Related Product By Brand

VUO110-08NO7
VUO110-08NO7
IXYS
BRIDGE RECT 3P 800V 127A PWS-E1
DSS25-0045A
DSS25-0045A
IXYS
DIODE SCHOTTKY 45V 25A TO220AC
MCD26-08IO1B
MCD26-08IO1B
IXYS
MOD THYRISTOR/DIO 800V TO-240AA
IXFN150N65X2
IXFN150N65X2
IXYS
MOSFET N-CH 650V 145A SOT227B
IXTP1R4N100P
IXTP1R4N100P
IXYS
MOSFET N-CH 1000V 1.4A TO220AB
IXTH96N25T
IXTH96N25T
IXYS
MOSFET N-CH 250V 96A TO247
IXFN200N07
IXFN200N07
IXYS
MOSFET N-CH 70V 200A SOT-227B
IXSN62N60U1
IXSN62N60U1
IXYS
IGBT MOD 600V 90A 250W SOT227B
IXBH9N160G
IXBH9N160G
IXYS
IGBT 1600V 9A 100W TO247AD
IXGR48N60B3D4A
IXGR48N60B3D4A
IXYS
IGBT 600V ISOPLUS247
IXST30N60BD1
IXST30N60BD1
IXYS
IGBT 600V 55A 200W TO268
IXGH48N60B3
IXGH48N60B3
IXYS
IGBT 600V 300W TO247AD