IXTR140P10T
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IXYS IXTR140P10T

Manufacturer No:
IXTR140P10T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTR140P10T Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 100V 110A ISOPLUS247
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13mOhm @ 70A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:400 nC @ 10 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:31400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):270W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS247™
Package / Case:TO-247-3
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Similar Products

Part Number IXTR140P10T IXTT140P10T  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 70A, 10V 12mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 400 nC @ 10 V 400 nC @ 10 V
Vgs (Max) ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 31400 pF @ 25 V 31400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 270W (Tc) 568W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package ISOPLUS247™ TO-268AA
Package / Case TO-247-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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