IXTQ69N30P
  • Share:

IXYS IXTQ69N30P

Manufacturer No:
IXTQ69N30P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTQ69N30P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 69A TO3P
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:69A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:49mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4960 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
0 Remaining View Similar

In Stock

$10.93
16

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTQ69N30P IXTT69N30P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V
Current - Continuous Drain (Id) @ 25°C 69A (Tc) 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 49mOhm @ 500mA, 10V 49mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 180 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4960 pF @ 25 V 4960 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 500W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-3P TO-268AA
Package / Case TO-3P-3, SC-65-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Related Product By Categories

2SK3432-AZ
2SK3432-AZ
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
STP9NK50ZFP
STP9NK50ZFP
STMicroelectronics
MOSFET N-CH 500V 7.2A TO220FP
IRFR3710ZTRPBF
IRFR3710ZTRPBF
Infineon Technologies
MOSFET N-CH 100V 42A DPAK
BSC005N03LS5ATMA1
BSC005N03LS5ATMA1
Infineon Technologies
TRENCH <= 40V
HUF75345S3ST
HUF75345S3ST
onsemi
MOSFET N-CH 55V 75A D2PAK
NVMFS6D1N08HT1G
NVMFS6D1N08HT1G
onsemi
T8 80V
TSM080NB03CR RLG
TSM080NB03CR RLG
Taiwan Semiconductor Corporation
MOSFET N-CH 30V 14A/59A 8PDFN
IXFA50N20X3
IXFA50N20X3
IXYS
MOSFET N-CH 200V 50A TO263
IRF7422D2TRPBF
IRF7422D2TRPBF
Infineon Technologies
MOSFET P-CH 20V 4.3A 8SO
IXTA88N085T
IXTA88N085T
IXYS
MOSFET N-CH 85V 88A TO263
NTS4172NT1G
NTS4172NT1G
onsemi
MOSFET N-CH 30V 1.6A SC70-3
STD110N02RT4G-VF01
STD110N02RT4G-VF01
onsemi
MOSFET N-CH 24V 32A/110A DPAK

Related Product By Brand

VUO50-12NO3
VUO50-12NO3
IXYS
BRIDGE RECT 3P 1.2KV 58A FO-F-B
MDD44-12N1B
MDD44-12N1B
IXYS
DIODE MODULE 1.2KV 64A TO240AA
IXFT150N25X3HV
IXFT150N25X3HV
IXYS
MOSFET N-CH 250V 150A TO268HV
IXFN80N50
IXFN80N50
IXYS
MOSFET N-CH 500V 80A SOT-227B
IXTK102N30P
IXTK102N30P
IXYS
MOSFET N-CH 300V 102A TO264
IXTA3N100D2-TRL
IXTA3N100D2-TRL
IXYS
MOSFET N-CH 1000V 3A TO263
IXFA12N50P
IXFA12N50P
IXYS
MOSFET N-CH 500V 12A TO263
IXFN24N100
IXFN24N100
IXYS
MOSFET N-CH 1KV 24A SOT-227B
IXFK52N60Q2
IXFK52N60Q2
IXYS
MOSFET N-CH 600V 52A TO264AA
IXFN20N120
IXFN20N120
IXYS
MOSFET N-CH 1200V 20A SOT-227B
IXFH80N085
IXFH80N085
IXYS
MOSFET N-CH 85V 80A TO247AD
IXGT50N60C2
IXGT50N60C2
IXYS
IGBT 600V 75A 400W TO268