IXYS-IXTQ52P10P - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	50mOhm @ 52A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	60 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2845 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	300W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-3P
Package / Case:	TO-3P-3, SC-65-3

IXYS IXTQ52P10P