IXTQ52N30P
  • Share:

IXYS IXTQ52N30P

Manufacturer No:
IXTQ52N30P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTQ52N30P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 52A TO3P
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:66mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3490 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):400W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
0 Remaining View Similar

In Stock

$6.73
34

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTQ52N30P IXTT52N30P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V
Current - Continuous Drain (Id) @ 25°C 52A (Tc) 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 66mOhm @ 26A, 10V 66mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 110 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3490 pF @ 25 V 3490 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 400W (Tc) 400W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-3P TO-268AA
Package / Case TO-3P-3, SC-65-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Related Product By Categories

P3M06040K3
P3M06040K3
PN Junction Semiconductor
SICFET N-CH 650V 68A TO247-3
IRFB7430PBF
IRFB7430PBF
Infineon Technologies
MOSFET N CH 40V 195A TO220
STL120N4F6AG
STL120N4F6AG
STMicroelectronics
MOSFET N-CH 40V 55A POWERFLAT
IPP023N04NGXKSA1
IPP023N04NGXKSA1
Infineon Technologies
MOSFET N-CH 40V 90A TO220-3
IPB180N03S4L-H0
IPB180N03S4L-H0
Infineon Technologies
IPB180N03 - 20V-40V N-CHANNEL AU
STW80NF06
STW80NF06
STMicroelectronics
MOSFET N-CH 60V 80A TO247-3
NTLJS3113PTAG
NTLJS3113PTAG
onsemi
MOSFET P-CH 20V 3.5A 6WDFN
NTMFS4935NBT1G
NTMFS4935NBT1G
onsemi
MOSFET N-CH 30V 13A/93A 5DFN
NTTFSC4823NTAG
NTTFSC4823NTAG
onsemi
MOSFET 30V 50A 8WDFN
AOC2417
AOC2417
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 20V 3.5A 4ALPHADFN
SPP06N80C3XK
SPP06N80C3XK
Infineon Technologies
MOSFET N-CH 800V 6A TO220-3
CZDM1003N BK
CZDM1003N BK
Central Semiconductor Corp
MOSFET N-CH 100V 3A SOT-223

Related Product By Brand

VUO22-12NO1
VUO22-12NO1
IXYS
BRIDGE RECT 3P 1.2KV 25A V1-A
DSS16-01AS-TUB
DSS16-01AS-TUB
IXYS
DIODE SCHOTTKY 100V 16A TO263AB
MCC26-08IO1B
MCC26-08IO1B
IXYS
MOD THYRISTOR DUAL 800V TO-240AA
CS19-12HO1S-TRL
CS19-12HO1S-TRL
IXYS
SCR 1.2KV 29A TO263
SV6050RA2TP
SV6050RA2TP
IXYS
AEC-Q GRADE 50 AMP STANDARD HIGH
VMM300-03F
VMM300-03F
IXYS
MOSFET 2N-CH 300V 290A Y3-DCB
IXTP2N100
IXTP2N100
IXYS
MOSFET N-CH 1000V 2A TO220AB
IXTH140N075L2
IXTH140N075L2
IXYS
MOSFET N-CH 75V 140A TO247
IXTX550N055T2
IXTX550N055T2
IXYS
MOSFET N-CH 55V 550A PLUS247-3
IXGT32N170
IXGT32N170
IXYS
IGBT 1700V 75A 350W TO268
IXGR50N60A2U1
IXGR50N60A2U1
IXYS
IGBT 600V 75A 200W ISOPLUS247
IX4R11S3T/R
IX4R11S3T/R
IXYS
IC GATE DRVR HALF-BRIDGE 16SOIC