IXTQ48N20T
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IXYS IXTQ48N20T

Manufacturer No:
IXTQ48N20T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTQ48N20T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 48A TO3P
Delivery:
Payment:
iso14001
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iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:48A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:50mOhm @ 24A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3090 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
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Similar Products

Part Number IXTQ48N20T IXTQ98N20T  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 48A (Tc) 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 50mOhm @ 24A, 10V -
Vgs(th) (Max) @ Id 4.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V -
Vgs (Max) ±30V -
Input Capacitance (Ciss) (Max) @ Vds 3090 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 250W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

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