IXTQ460P2
  • Share:

IXYS IXTQ460P2

Manufacturer No:
IXTQ460P2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTQ460P2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 24A TO3P
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:270mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2890 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):480W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
0 Remaining View Similar

In Stock

$6.61
44

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTQ460P2 IXTQ470P2   IXTQ480P2   IXTQ450P2  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc) 42A (Tc) 52A (Tc) 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 12A, 10V 145mOhm @ 500mA, 10V 120mOhm @ 26A, 10V 330mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V 88 nC @ 10 V 108 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2890 pF @ 25 V 5400 pF @ 25 V 6800 pF @ 25 V 2530 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 480W (Tc) 830W (Tc) 960W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-3P TO-3P TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

Related Product By Categories

IPP147N12N3GXKSA1
IPP147N12N3GXKSA1
Infineon Technologies
MOSFET N-CH 120V 56A TO220-3
PJC138L_R1_00001
PJC138L_R1_00001
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
SI8416DB-T2-E1
SI8416DB-T2-E1
Vishay Siliconix
MOSFET N-CH 8V 16A 6MICRO FOOT
BSZ180P03NS3GATMA1
BSZ180P03NS3GATMA1
Infineon Technologies
MOSFET P-CH 30V 9A/39.6A TSDSON
SISS04DN-T1-GE3
SISS04DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 50.5A/80A PPAK
2N7002/S711215
2N7002/S711215
NXP USA Inc.
N-CHANNEL SMALL SIGNAL MOSFET
PMV25ENEA215
PMV25ENEA215
NXP USA Inc.
PMV25E SMALL SIGNAL FET, SOT23
DMP2012SN-7
DMP2012SN-7
Diodes Incorporated
MOSFET P-CH 20V 700MA SC59-3
TPC8125,LQ(S
TPC8125,LQ(S
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 10A 8SOP
PMV16UN,215
PMV16UN,215
NXP USA Inc.
MOSFET N-CH 20V 5.8A TO236AB
SFT1440-E
SFT1440-E
onsemi
MOSFET N-CH 600V 1.5A TP
IPP80N06S2L11AKSA2
IPP80N06S2L11AKSA2
Infineon Technologies
MOSFET N-CH 55V 80A TO220-3

Related Product By Brand

VUO36-18NO8
VUO36-18NO8
IXYS
BRIDGE RECT 3P 1.8KV 27A FO-B
DSEP2X60-12A
DSEP2X60-12A
IXYS
DIODE MODULE 1.2KV 60A SOT227B
DAA10P1800PZ-TUB
DAA10P1800PZ-TUB
IXYS
POWER DIODE DISCRETES-RECTIFIER
DSEC30-03A
DSEC30-03A
IXYS
DIODE ARRAY GP 300V 15A TO247AD
DNA30E2200PC-TUB
DNA30E2200PC-TUB
IXYS
DIODE GEN PURP 2.2KV 30A TO263
IXFP72N30X3M
IXFP72N30X3M
IXYS
MOSFET N-CH 300V 72A TO220
IXTP100N15X4
IXTP100N15X4
IXYS
MOSFET N-CH 150V 100A TO220
IXTQ160N10T
IXTQ160N10T
IXYS
MOSFET N-CH 100V 160A TO3P
IXFC14N60P
IXFC14N60P
IXYS
MOSFET N-CH 600V 8A ISOPLUS220
IXFT4N100Q
IXFT4N100Q
IXYS
MOSFET N-CH 1000V 4A TO268
IXBN75N170A
IXBN75N170A
IXYS
IGBT MOD 1700V 75A 625W SOT227B
IXXX100N60C3H1
IXXX100N60C3H1
IXYS
IGBT 600V 170A 695W PLUS247