IXTQ40N50L2
  • Share:

IXYS IXTQ40N50L2

Manufacturer No:
IXTQ40N50L2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTQ40N50L2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 40A TO3P
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:170mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:320 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):540W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
0 Remaining View Similar

In Stock

$18.95
52

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTQ40N50L2 IXTQ30N50L2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 20A, 10V 200mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 320 nC @ 10 V 240 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 10400 pF @ 25 V 8100 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 540W (Tc) 400W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

Related Product By Categories

FDZ3N513ZT
FDZ3N513ZT
Fairchild Semiconductor
MOSFET P-CH 30V 1.1A 4WLCSP
IRF7495TRPBF
IRF7495TRPBF
Infineon Technologies
MOSFET N-CH 100V 7.3A 8SO
IRFB4510PBF
IRFB4510PBF
Infineon Technologies
MOSFET N-CH 100V 62A TO220AB
IPP80N06S2L-05
IPP80N06S2L-05
Infineon Technologies
N-CHANNEL POWER MOSFET
APT26F120L
APT26F120L
Microchip Technology
MOSFET N-CH 1200V 27A TO264
IRFZ24NSTRRPBF
IRFZ24NSTRRPBF
Infineon Technologies
MOSFET N-CH 55V 17A D2PAK
BUK9529-100B,127
BUK9529-100B,127
Nexperia USA Inc.
MOSFET N-CH 100V 46A TO220AB
SI4621DY-T1-E3
SI4621DY-T1-E3
Vishay Siliconix
MOSFET P-CH 20V 6.2A 8SO
SIA450DJ-T1-E3
SIA450DJ-T1-E3
Vishay Siliconix
MOSFET N-CH 240V 1.52A PPAK
TPC8022-H(TE12LQ,M
TPC8022-H(TE12LQ,M
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 7.5A 8SOP
SCT3017ALHRC11
SCT3017ALHRC11
Rohm Semiconductor
SICFET N-CH 650V 118A TO247N
RS1E350BNTB
RS1E350BNTB
Rohm Semiconductor
MOSFET N-CH 30V 35A 8HSOP

Related Product By Brand

DSEE29-06CC
DSEE29-06CC
IXYS
DIODE ARRAY 600V 30A ISOPLUS220
MCD95-08IO8B
MCD95-08IO8B
IXYS
THYRISTOR DOUB 800V 116A TO-240
MCD250-18IO1
MCD250-18IO1
IXYS
MOD THYRISTOR/DIODE 1800V Y2-DCB
IXTT240N15X4HV
IXTT240N15X4HV
IXYS
MOSFET N-CH 150V 240A TO268HV
IXFC74N20P
IXFC74N20P
IXYS
MOSFET N-CH 200V 35A ISOPLUS220
IXKC40N60C
IXKC40N60C
IXYS
MOSFET N-CH 600V 28A ISOPLUS220
IXFK35N50
IXFK35N50
IXYS
MOSFET N-CH 500V 35A TO264AA
IXDH30N120D1
IXDH30N120D1
IXYS
IGBT 1200V 60A 300W TO247AD
IXGT60N60
IXGT60N60
IXYS
IGBT 600V 75A 300W TO268
IXSX40N60BD1
IXSX40N60BD1
IXYS
IGBT 600V 75A 280W PLUS247
IXGH25N120A
IXGH25N120A
IXYS
IGBT 1200V 50A 200W TO247AD
IXGR72N60A3H1
IXGR72N60A3H1
IXYS
IGBT 600V 75A 200W ISOPLUS247