IXTQ30N60P
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IXYS IXTQ30N60P

Manufacturer No:
IXTQ30N60P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTQ30N60P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 30A TO3P
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:240mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:5050 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):540W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
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Similar Products

Part Number IXTQ30N60P IXTQ30N50P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 240mOhm @ 15A, 10V 200mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 5050 pF @ 25 V 4150 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 540W (Tc) 460W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

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