IXTQ18N60P
  • Share:

IXYS IXTQ18N60P

Manufacturer No:
IXTQ18N60P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTQ18N60P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 18A TO3P
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:420mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
0 Remaining View Similar

In Stock

$5.13
165

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTQ18N60P IXTQ14N60P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 420mOhm @ 9A, 10V 550mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V 2500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 360W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

Related Product By Categories

RJK0397DPA-00#J53
RJK0397DPA-00#J53
Renesas Electronics America Inc
MOSFET N-CH 30V 30A 8WPAK
IXFH130N15X3
IXFH130N15X3
IXYS
MOSFET N-CH 150V 130A TO247
SI2347DS-T1-GE3
SI2347DS-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 5A SOT23-3
NTMT190N65S3H
NTMT190N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
IRF9540NSTRRPBF
IRF9540NSTRRPBF
Infineon Technologies
MOSFET P-CH 100V 23A D2PAK
IRLZ44STRRPBF
IRLZ44STRRPBF
Vishay Siliconix
MOSFET N-CH 60V 50A D2PAK
IXFR15N80Q
IXFR15N80Q
IXYS
MOSFET N-CH 800V 13A ISOPLUS247
IRFS4610TRRPBF
IRFS4610TRRPBF
Infineon Technologies
MOSFET N-CH 100V 73A D2PAK
IPI139N08N3GHKSA1
IPI139N08N3GHKSA1
Infineon Technologies
MOSFET N-CH 80V 45A TO262-3
IXFH12N100Q
IXFH12N100Q
IXYS
MOSFET N-CH 1000V 12A TO247AD
TK40P03M1(T6RSS-Q)
TK40P03M1(T6RSS-Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 40A DP
NVB6410ANT4G
NVB6410ANT4G
onsemi
MOSFET N-CH 100V 76A D2PAK

Related Product By Brand

DPG30C200PB
DPG30C200PB
IXYS
DIODE ARRAY GP 200V 15A TO220AB
DSEC29-02AS-TUB
DSEC29-02AS-TUB
IXYS
DIODE ARRAY GP 200V 15A TO263
DSEP29-06AS-TRL
DSEP29-06AS-TRL
IXYS
DIODE GEN PURP 600V 30A TO263
N4240EA480
N4240EA480
IXYS
THYRISTOR PHASE 4240A 4800V DISC
IXTA1R4N100P
IXTA1R4N100P
IXYS
MOSFET N-CH 1000V 1.4A TO263
IXTH44P15T
IXTH44P15T
IXYS
MOSFET P-CH 150V 44A TO247
IXFT180N20X3HV
IXFT180N20X3HV
IXYS
MOSFET N-CH 200V 180A TO268HV
IXFT80N65X2HV-TRL
IXFT80N65X2HV-TRL
IXYS
MOSFET N-CH 650V 80A TO268HV
IXFX14N100
IXFX14N100
IXYS
MOSFET N-CH 1000V 14A PLUS247-3
IXXR110N65B4H1
IXXR110N65B4H1
IXYS
IGBT 650V 150A 455W ISOPLUS247
IXST45N120B
IXST45N120B
IXYS
IGBT 1200V 75A 300W TO268
IXCY02M35A
IXCY02M35A
IXYS
IC CURRENT REGULATOR DPAK