IXTQ180N055T
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IXYS IXTQ180N055T

Manufacturer No:
IXTQ180N055T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTQ180N055T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 180A TO3P
Delivery:
Payment:
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iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:160 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:5800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
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Similar Products

Part Number IXTQ180N055T IXTQ180N085T   IXTQ182N055T   IXTQ280N055T  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 85 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 180A (Tc) 182A (Tc) 280A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V 10V 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V 5.5mOhm @ 25A, 10V 5mOhm @ 25A, 10V 3.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V 170 nC @ 10 V 114 nC @ 10 V 200 nC @ 10 V
Vgs (Max) - ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5800 pF @ 25 V 7500 pF @ 25 V 4850 pF @ 25 V 9700 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) - 430W (Tc) 360W (Tc) 550W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-3P TO-3P TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

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