IXTQ170N10P
  • Share:

IXYS IXTQ170N10P

Manufacturer No:
IXTQ170N10P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTQ170N10P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 170A TO3P
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:198 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):715W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
0 Remaining View Similar

In Stock

$12.09
60

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTQ170N10P IXTQ110N10P   IXTQ140N10P  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc) 110A (Tc) 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 500mA, 10V 15mOhm @ 500mA, 10V 11mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 198 nC @ 10 V 110 nC @ 10 V 155 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 25 V 3550 pF @ 25 V 4700 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 715W (Tc) 480W (Tc) 600W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-3P TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

Related Product By Categories

IPP072N10N3GXKSA1
IPP072N10N3GXKSA1
Infineon Technologies
MOSFET N-CH 100V 80A TO220-3
SQ3418AEEV-T1_BE3
SQ3418AEEV-T1_BE3
Vishay Siliconix
MOSFET N-CH 40V 8A 6TSOP
TSM180N03PQ33 RGG
TSM180N03PQ33 RGG
Taiwan Semiconductor Corporation
MOSFET N-CH 30V 25A 8PDFN
ISP12DP06NMXTSA1
ISP12DP06NMXTSA1
Infineon Technologies
MOSFET P-CH 60V 2.8A SOT223-4
IRFIZ34G
IRFIZ34G
Vishay Siliconix
MOSFET N-CH 60V 20A TO220-3
NTB18N06T4
NTB18N06T4
onsemi
MOSFET N-CH 60V 15A D2PAK
FQPF6N90C
FQPF6N90C
onsemi
MOSFET N-CH 900V 6A TO220F
FDP150N10A
FDP150N10A
onsemi
MOSFET N-CH 100V 50A TO220-3
FDMC7678
FDMC7678
onsemi
MOSFET N-CH 30V 17.5A/19.5A 8MLP
DMG4N60SCT
DMG4N60SCT
Diodes Incorporated
MOSFET N-CH 600V 4.5A TO220AB
NVMFS6B75NLT3G
NVMFS6B75NLT3G
onsemi
MOSFET N-CH 100V 7A/28A 5DFN
RSS120N03FU6TB
RSS120N03FU6TB
Rohm Semiconductor
MOSFET N-CH 30V 12A 8SOP

Related Product By Brand

MCC26-16IO1B
MCC26-16IO1B
IXYS
THYRISTOR MODULE 1600V 2X32A
MCD44-08IO1B
MCD44-08IO1B
IXYS
MOD THYRISTOR DUAL 800V TO-240AA
IXTT10P60
IXTT10P60
IXYS
MOSFET P-CH 600V 10A TO268
IXTP260N055T2
IXTP260N055T2
IXYS
MOSFET N-CH 55V 260A TO220AB
IXTH10N100D2
IXTH10N100D2
IXYS
MOSFET N-CH 1000V 10A TO247
IXFK52N100X
IXFK52N100X
IXYS
MOSFET N-CH 1000V 52A TO264
IXFK32N100P
IXFK32N100P
IXYS
MOSFET N-CH 1000V 32A TO264AA
IXFP8N65X2
IXFP8N65X2
IXYS
MOSFET N-CH 650V 8A TO220
IXFR48N60Q3
IXFR48N60Q3
IXYS
MOSFET N-CH 600V 32A ISOPLUS247
IXFC36N50P
IXFC36N50P
IXYS
MOSFET N-CH 500V 19A ISOPLUS220
IXTA1N200P3HV-TRL
IXTA1N200P3HV-TRL
IXYS
MOSFET N-CH 2000V 1A TO263HV
IXDR30N120D1
IXDR30N120D1
IXYS
IGBT 1200V 50A 200W ISOPLUS247