IXTQ160N10T
  • Share:

IXYS IXTQ160N10T

Manufacturer No:
IXTQ160N10T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTQ160N10T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 160A TO3P
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:132 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):430W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
0 Remaining View Similar

In Stock

$5.26
33

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTQ160N10T IXTQ180N10T   IXTQ130N10T  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 160A (Tc) 180A (Tc) 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 10V 6.4mOhm @ 25A, 10V 9.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 132 nC @ 10 V 151 nC @ 10 V 104 nC @ 10 V
Vgs (Max) ±30V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6600 pF @ 25 V 6900 pF @ 25 V 5080 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 430W (Tc) 480W (Tc) 360W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-3P TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

Related Product By Categories

PJA3434_R1_00001
PJA3434_R1_00001
Panjit International Inc.
SOT-23, MOSFET
IRF620PBF-BE3
IRF620PBF-BE3
Vishay Siliconix
MOSFET N-CH 200V 5.2A TO220AB
TSM4NB65CI C0G
TSM4NB65CI C0G
Taiwan Semiconductor Corporation
MOSFET N-CH 650V 4A ITO220AB
SI2371EDS-T1-GE3
SI2371EDS-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 4.8A SOT-23
STD45NF75T4
STD45NF75T4
STMicroelectronics
MOSFET N-CH 75V 40A DPAK
PMV32UP/MI215
PMV32UP/MI215
NXP USA Inc.
P-CHANNEL MOSFET
PJP2NA1K_T0_00001
PJP2NA1K_T0_00001
Panjit International Inc.
1000V N-CHANNEL MOSFET
DMP2065U-13
DMP2065U-13
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT23 T&R 1
LND150N3-G-P002
LND150N3-G-P002
Microchip Technology
MOSFET N-CH 500V 30MA TO92-3
IXFR40N90P
IXFR40N90P
IXYS
MOSFET N-CH 900V 21A ISOPLUS247
IXFX26N120P
IXFX26N120P
IXYS
MOSFET N-CH 1200V 26A PLUS247-3
FKI06051
FKI06051
Sanken
MOSFET N-CH 60V 69A TO220F

Related Product By Brand

DSEC60-02A
DSEC60-02A
IXYS
DIODE ARRAY GP 200V 30A TO247AD
VVZ175-16IO7
VVZ175-16IO7
IXYS
RECT BRIDGE 3PH 167A 1600V PWSE2
MCD310-08IO1
MCD310-08IO1
IXYS
MOD THYRISTOR/DIODE 800V Y2-DCB
CLE20E1200PC-TUB
CLE20E1200PC-TUB
IXYS
SCR 1.2KV 35A TO263
IXFH90N20X3
IXFH90N20X3
IXYS
MOSFET N-CH 200V 90A TO247
IXFH22N65X2
IXFH22N65X2
IXYS
MOSFET N-CH 650V 22A TO247
IXFK36N60
IXFK36N60
IXYS
MOSFET N-CH 600V 36A TO264AA
IXTC62N15P
IXTC62N15P
IXYS
MOSFET N-CH 150V 36A ISOPLUS220
IXYL60N450
IXYL60N450
IXYS
IGBT 4500V 90A 417W I5-PAK
IXGH15N120CD1
IXGH15N120CD1
IXYS
IGBT 1200V 30A 150W TO247
IXGA7N60B
IXGA7N60B
IXYS
IGBT 600V 14A 54W TO263
IXGH31N60
IXGH31N60
IXYS
IGBT 600V 60A 150W TO247AD