IXTQ130N10T
  • Share:

IXYS IXTQ130N10T

Manufacturer No:
IXTQ130N10T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTQ130N10T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 130A TO3P
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:130A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:104 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5080 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
0 Remaining View Similar

In Stock

$5.37
82

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTQ130N10T IXTQ180N10T   IXTQ160N10T   IXTQ130N15T  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 150 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc) 180A (Tc) 160A (Tc) 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 9.1mOhm @ 25A, 10V 6.4mOhm @ 25A, 10V 7mOhm @ 25A, 10V 12mOhm @ 65A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V 151 nC @ 10 V 132 nC @ 10 V 113 nC @ 10 V
Vgs (Max) ±20V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 5080 pF @ 25 V 6900 pF @ 25 V 6600 pF @ 25 V 9800 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 360W (Tc) 480W (Tc) 430W (Tc) 750W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-3P TO-3P TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

Related Product By Categories

IXTP8N70X2
IXTP8N70X2
IXYS
MOSFET N-CH 700V 8A TO220-3
IAUC120N06S5L032ATMA1
IAUC120N06S5L032ATMA1
Infineon Technologies
MOSFET N-CH 60V 120A TDSON-8-34
STD12N50DM2
STD12N50DM2
STMicroelectronics
MOSFET N-CH 500V 11A DPAK
STP9N60M2
STP9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220
SPP16N50C3
SPP16N50C3
Infineon Technologies
N-CHANNEL POWER MOSFET
DMP2070UQ-13
DMP2070UQ-13
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT23 T&R 1
FDMS0306AS
FDMS0306AS
onsemi
MOSFET N-CH 30V 26A/49A 8PQFN
STD90N02L-1
STD90N02L-1
STMicroelectronics
MOSFET N-CH 25V 60A IPAK
NTD85N02RT4G
NTD85N02RT4G
onsemi
MOSFET N-CH 24V 12A/85A DPAK
APT33N90JCCU2
APT33N90JCCU2
Microsemi Corporation
MOSFET N-CH 900V 33A SOT227
RUL035N02FRATR
RUL035N02FRATR
Rohm Semiconductor
MOSFET N-CH 20V 3.5A TUMT6
US5U29TR
US5U29TR
Rohm Semiconductor
MOSFET P-CH 20V 1A TUMT5

Related Product By Brand

DNA40U2200GU
DNA40U2200GU
IXYS
POWER DIODE DISCRETES-RECTIFIER
DPG10IM300UC-TRL
DPG10IM300UC-TRL
IXYS
DIODE GEN PURP 300V 10A TO252
MCD56-12IO1B
MCD56-12IO1B
IXYS
MOD THYRISTOR/DIO 1200V TO-240AA
IXFP7N80P
IXFP7N80P
IXYS
MOSFET N-CH 800V 7A TO220AB
IXFR32N100Q3
IXFR32N100Q3
IXYS
MOSFET N-CH 1000V 23A ISOPLUS247
IXFK170N20T
IXFK170N20T
IXYS
MOSFET N-CH 200V 170A TO264AA
IXTK20N150
IXTK20N150
IXYS
MOSFET N-CH 1500V 20A TO264
IXYH50N120C3D1
IXYH50N120C3D1
IXYS
IGBT 1200V 90A 625W TO247
IXGH48N60B3D1
IXGH48N60B3D1
IXYS
IGBT 600V 300W TO247
IXYA20N65C3-TRL
IXYA20N65C3-TRL
IXYS
IXYA20N65C3 TRL
IXGH36N60B3D4
IXGH36N60B3D4
IXYS
IGBT 600V 250W TO247
IXGK120N60B
IXGK120N60B
IXYS
IGBT 600V 200A 660W TO264AA